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Patent Approval for Advanced SiC Crystal Growth Innovation
HKT Technology is proud to announce that our patent application for “A Crystal Growth Apparatus with Multiple Deposition Sites and Its Manufacturing Process” (Application No. 112147969) has successfully passed the review process by the Intellectual Property Office. This milestone reflects our commitment to advancing silicon carbide (SiC) technology and maintaining a leading edge in semiconductor innovation. We will continue to drive technological excellence and deliver high-quality solutions to meet the evolving demands of the industry.
Additionally, patent applications in China and the European Union are currently under review.
SiC Wafer Growth Technology and Measurement Techniques
Silicon Carbide (SiC) is at the forefront of semiconductor innovation, especially in high-power and high-frequency applications. Producing high-quality SiC wafers involves complex processes and stringent measurement techniques. As demand for SiC continues to grow, advancements in growth technology and defect characterization will play a vital role in meeting the industry’s stringent quality standards.
By investing in robust measurement systems and optimizing growth processes, SiC manufacturers can achieve higher yields, reduced defects, and superior products for next-generation semiconductor applications.
The SiC Growth Process
The production of SiC wafers begins with a carefully controlled crystal growth process. SiC is formed by combining silicon (Si) and carbon (C) in a high-temperature environment, promoting vertical and lateral growth from a seed crystal.
Defect Detection and Characterization
Detecting and mitigating defects is critical to improving yield and quality in SiC production. A variety of advanced measurement techniques are employed at different stages of growth to monitor and control the process.
Measurement Techniques
Precise characterization tools help monitor composition, stress, and defect density, ensuring high-quality production.
Key measurement methods include:
SIMS (Secondary Ion Mass Spectrometry)
XPS (X-ray Photoelectron Spectroscopy)
X-ray Diffraction (XRD) and Raman Spectroscopy
TEM (Transmission Electron Microscopy)
AFM (Atomic Force Microscopy) and OM (Optical Microscopy – Etching)
Electrical Characterization (Hall Effect, DLTS)
Overcoming Technical Challenges
To ensure consistent quality and yield, manufacturers must address various technical hurdles, such as:
Process Stability: Maintaining a stable temperature and gas flow during growth reduces thermal stress and microvoids.
Defect Reduction: Advanced seed preparation and optimized growth conditions help minimize defects.
Facility and Equipment Optimization: Regular maintenance and calibration of crystal growth equipment enhance reliability.
Redefining SiC Technology
A Crystal Growth Apparatus with Multiple Deposition Sites
The growth of high-quality silicon carbide (SiC) wafers is fundamental for the evolution of power electronics and advanced semiconductor applications. However, ensuring superior yield and performance in SiC crystal production is not without its challenges. Defects like micropipes, comets, and pits can significantly impact the wafer’s quality and limit mass production.
Innovative Solutions
A Crystal Growth Apparatus with Multiple Deposition Sites addresses these challenges, offering an innovative solution for optimizing SiC crystal growth and improving yield.
The multiple deposition site apparatus represents a significant advancement in SiC crystal growth technology. This approach allows for controlled nucleation, reducing defect density and improving structural uniformity.
The multiple deposition site apparatus minimizes defects during crystal formation by ensuring precise control over nucleation, resulting in highly uniform SiC crystals.
By enabling simultaneous crystal growth across multiple sites, this technology significantly improves deposition speed while maintaining consistent quality.
Increase output and reduce waste through continuous improvement in yield and process efficiency.
Future Prospects
This innovative method aligns with the industry’s push toward larger-diameter wafers and more efficient manufacturing processes. As demand for SiC continues to grow in automotive, renewable energy, and next-generation communication networks, advancements like the multiple deposition site apparatus will be crucial for maintaining technological leadership and meeting evolving market needs.