MILESTONE

Leading the Future of Compound Semiconductors

HKT Technology is leading the compound semiconductor industry with groundbreaking advancements in silicon carbide (SiC) single-crystal growth.
Our commitment to innovation, precision, and global scalability ensures that we remain at the forefront of next-generation semiconductor materials.

A Journey of Excellence

2023: Laying the Foundation

  • Installation and qualification of two high-tech furnaces for SiC growth.
  • Yield optimization, reaching 40% production efficiency.

2024: Expansion & Innovation

  • Expansion with four additional furnaces, boosting production capacity.
  • Development of 8-inch SiC wafers, setting new industry standards.
  • Yield improvement to 50% and increasing boule length from 22mm to 25mm.

2025-2026: Scaling to Mass Production

  • Establishment of a 12-furnace pilot line, moving towards full-scale production.
  • Further yield improvements to 60%-65% and boule length growth to 28mm.

2027-2029: Leading Global SiC Wafer Production

  • Consistent quarterly production with 36 furnaces per batch.
  • Continuous yield stabilization at 65%.
  • Full demonstration of 8-inch SiC wafers, revolutionizing semiconductor applications.

 

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